Before You Begin
Question #42719
The Question
An n-type semiconductor bar is positioned along the -axis. The donor impurity concentration is non-uniform, resulting in a steady-state electron concentration profile for , where and are positive constants. The semiconductor is in thermal equilibrium at an absolute temperature . Assuming the Einstein relation holds (where is the diffusion coefficient, is the electron mobility, is the Boltzmann constant, and is the elementary charge), what is the built-in potential difference between and ?
Options
- A.
- B.
- C.
- D.
0
Check Your Answer
Correct Answer
Step-by-Step Solution
Explanation
How the Examiner Thinks
Multi-Concept_Bridge
Master problems that require linking physics and math concepts to solve complex competitive questions.
Concepts Behind This Question
Ohm's Law Validity|Drift vs Diffusion Current|Integration (Poisson/Maxwell)
Why This Question Is Tricky
Common Mistakes
Students often incorrectly assume that Ohm's Law () is the only source of current, leading them to conclude that zero net current in thermal equilibrium implies zero electric field (and thus zero potential difference, Option D).
This ignores the diffusion current driven by the spatial gradient of charge carriers.
Furthermore, students who do account for diffusion often make sign errors by forgetting that electrons carry a negative charge, or they fail to correctly apply the Einstein relation to link mobility and the diffusion coefficient, leading to an inverted potential sign (Option B) or missing the exponent multiplier (Option C).
This question forces the reconciliation of non-ohmic diffusion with the requirement for zero net current, testing the fundamental origin of the built-in potential.
Quick Facts About This Question
Question Information
| Subject | Physics |
| Chapter | Current Electricity - Class 12 |
| Concept | Ohm's Law Validity |
| Difficulty | 8 |
| Cognitive Load | 7 |
| Target Solve Time | 160 sec |
| Access | Free |