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Question #42818
The Question
An n-type semiconductor at a constant temperature has a non-uniform donor impurity profile. Assuming complete ionization, the electron concentration is given by for , where and are positive constants. The electron mobility is dominated by ionized impurity scattering, such that the momentum relaxation time is inversely proportional to the local impurity concentration. At , the electron diffusion coefficient is . Which of the following expressions gives the magnitude of the electron diffusion current density at ? (Let be the elementary charge).
Options
- A.
- B.
- C.
- D.
Check Your Answer
Correct Answer
Step-by-Step Solution
Explanation
How the Examiner Thinks
Variable_Constraint
Develop pure symbolic logic skills by mastering algebraic constraints without relying on numerical data.
Concepts Behind This Question
Relaxation Time Dependency|Drift vs Diffusion Current|Transistor Biasing Stability
Why This Question Is Tricky
Common Mistakes
Students often memorize the diffusion current equation and treat the diffusion coefficient as a universal constant for a given material and temperature.
In a graded junction where ionized impurity scattering dominates, the local relaxation time (and thus mobility ) depends strongly on the local doping concentration.
By the Einstein relation (), must also vary spatially.
The trap is calculating the concentration gradient at and multiplying it by the constant , leading to the incorrect exponentially decaying current (Option B).
The correct approach recognizes that the exponential increase in exactly cancels the exponential decrease in the concentration gradient, resulting in a spatially uniform diffusion current.
Quick Facts About This Question
Question Information
| Subject | Physics |
| Chapter | Current Electricity - Class 12 |
| Concept | Relaxation Time Dependency |
| Difficulty | 8 |
| Cognitive Load | 7 |
| Target Solve Time | 160 sec |
| Access | Free |